Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”

✍ Scribed by Kang, Hyun-Chul; Olac-vaw, Roman; Karasawa, Hiromi; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Tetsuya; Fukidome, Hirokazu; Suemitsu, Maki; Otsuji, Taiichi

• Book ID: 120056151
• Publisher: Institute of Pure and Applied Physics
• Year: 2010
• Tongue: English
• Weight: 66 KB
• Volume: 49
• Category: Article
• ISSN: 0021-4922
• DOI: 10.1143/JJAP.49.079201