𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability

✍ Scribed by Frank Gao; Ravi Chanana; Tom Nicholls

Book ID
108361914
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
555 KB
Volume
42
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 7th European Symposium on Reliabil
[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S
✍ Meneghesso, G.; Haddab, Y.; Perrino, N.; Canali, C.; Zanoni, E. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 295 KB