[IEEE 10th International Semiconducting and Insulating Materials - Berkeley, CA, USA (1-5 June 1998)] Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) - Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

✍ Scribed by Horio, K.; Wakabayashi, A.; Otsuka, S.; Yamada, T.

• Book ID: 111657885
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 244 KB
• Volume: 0
• Category: Article
• ISBN-13: 9780780343542
• DOI: 10.1109/sim.1998.785136