[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S

✍ Scribed by Meneghesso, G.; Haddab, Y.; Perrino, N.; Canali, C.; Zanoni, E.

• Book ID: 111988246
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 295 KB
• Volume: 0
• Category: Article
• ISBN-13: 9780780333697
• DOI: 10.1109/esref.1996.888240