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Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors

✍ Scribed by Chattopadhyay, P; Majumdar, L


Book ID
111657762
Publisher
Institute of Physics
Year
1998
Tongue
English
Weight
135 KB
Volume
13
Category
Article
ISSN
0268-1242

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Experimental study on isolation edge eff
✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati