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Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures

✍ Scribed by R. B. Beck; T. Brozek; J. Ruzyllo; S. D. Hossain; R. E. Tressler


Book ID
112820129
Publisher
Springer US
Year
1993
Tongue
English
Weight
753 KB
Volume
22
Category
Article
ISSN
0361-5235

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The properties of BESOI p-Si / SiO / p-Si and n-Si / SiO / n-Si structures manufactured by direct bonding of 2 2 pre-oxidized Czochralski p-and n-type (100) 2-40 V ? cm silicon wafers were studied. Our study shows that the transversal static I-V and quasi-static C-V characteristics as well as the h