Electrical properties of Si/SiO2/Si stru
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A. Fedotov; Anis M.H. Saad; K. Enisherlova; A. Mazanik; B.G. Gorachev; E.M. Temp
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Article
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2003
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Elsevier Science
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English
β 331 KB
The properties of BESOI p-Si / SiO / p-Si and n-Si / SiO / n-Si structures manufactured by direct bonding of 2 2 pre-oxidized Czochralski p-and n-type (100) 2-40 V ? cm silicon wafers were studied. Our study shows that the transversal static I-V and quasi-static C-V characteristics as well as the h