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Effect of barium contamination on gate oxide integrity in high-k dram

✍ Scribed by H. Boubekeur; T. Mikolajick; A. Bauer; L. Frey; H. Ryssel

Book ID
117145719
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
194 KB
Volume
303
Category
Article
ISSN
0022-3093

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## Abstract The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy‐band gap. The presence of trace of metals on the silicon surfa