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Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process

✍ Scribed by T.E. Karlin; S.-L. Zhang; K.-H. Rydén; S. Nygren; M. Östling; F.M. d'Heurle


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
255 KB
Volume
73
Category
Article
ISSN
0169-4332

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