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Effect of a plasma protection net on residual stress in AlN films deposited by a magnetron sputtering system

โœ Scribed by Kazuya Kusaka; Takao Hanabusa; Kikuo Tominaga


Book ID
114086080
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
253 KB
Volume
290-291
Category
Article
ISSN
0040-6090

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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al