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Effect and model of gate oxide breakdown on CMOS inverters

✍ Scribed by R Rodrı́guez; J.H Stathis; B.P Linder

Book ID
108207307
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
207 KB
Volume
72
Category
Article
ISSN
0167-9317

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A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture