✦ LIBER ✦

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study

✍ Scribed by B. Kaczer; R. Degraeve; M. Rasras; A. De Keersgieter; K. Van de Mieroop; G. Groeseneken

Book ID: 108361900
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 346 KB
Volume: 42
Category: Article
ISSN: 0026-2714
DOI: 10.1016/s0026-2714(02)00026-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of MOSFET gate oxide breakdown on

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

✍ Kaczer, B.; Degraeve, R.; Rasras, M.; Van de Mieroop, K.; Roussel, P.J.; Groesen 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 173 KB

Predicting gate oxide reliability from s

Predicting gate oxide reliability from statistical process control nodes in integrated circuit manufacturing — a case study

✍ James G. Prendergast; Eamonn Murphy; Malcom Stephenson 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 118 KB 👁 2 views

This paper investigates the possibility of transferring the concepts developed for SPC into reliability control of integrated circuits. It employs Taguchi methods and response surface methodology to predict the reliability of a 20 nm gate oxide process using selected critical in line parameters. A T