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Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2

✍ Scribed by Lothar Bischoff; Stephan Hausmann; Matthias Voelskow; Jochen Teichert


Book ID
114170513
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
342 KB
Volume
147
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Raman investigation of lattice defects i
✍ J Teichert; H Hobert; L Bischoff; S Hausmann πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 612 KB

CoSi layers were produced by 70 keV Co focused ion implantation into Si(111). Within a comparative study the CoSi 2 2 layer quality and implantation damage were investigated as a function of pixel dwell-time and substrate temperature. Irradiation damage measurements were done by micro-Raman analysis