Raman investigation of lattice defects i
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J Teichert; H Hobert; L Bischoff; S Hausmann
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Article
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2000
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Elsevier Science
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English
β 612 KB
CoSi layers were produced by 70 keV Co focused ion implantation into Si(111). Within a comparative study the CoSi 2 2 layer quality and implantation damage were investigated as a function of pixel dwell-time and substrate temperature. Irradiation damage measurements were done by micro-Raman analysis