Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation

✍ Scribed by J Teichert; H Hobert; L Bischoff; S Hausmann

• Book ID: 104306726
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 612 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00281-6

✦ Synopsis

CoSi layers were produced by 70 keV Co focused ion implantation into Si(111). Within a comparative study the CoSi 2 2 layer quality and implantation damage were investigated as a function of pixel dwell-time and substrate temperature. Irradiation damage measurements were done by micro-Raman analysis. The results suggest that the dwell-time dependence of the CoSi layer formation -continuous layers for short and disrupted ones for long dwell-times -is caused by an 2 accordant transition from crystalline to amorphous silicon.