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Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam

✍ Scribed by S. Rubanov; P. R. Munroe


Book ID
110295957
Publisher
Springer
Year
2001
Tongue
English
Weight
133 KB
Volume
20
Category
Article
ISSN
0261-8028

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✍ J Teichert; H Hobert; L Bischoff; S Hausmann πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 612 KB

CoSi layers were produced by 70 keV Co focused ion implantation into Si(111). Within a comparative study the CoSi 2 2 layer quality and implantation damage were investigated as a function of pixel dwell-time and substrate temperature. Irradiation damage measurements were done by micro-Raman analysis