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Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering

✍ Scribed by W. Paul; A.J. Lewis; G.A.N. Connell; T.D. Moustakas


Book ID
107853553
Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
396 KB
Volume
20
Category
Article
ISSN
0038-1098

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ZnS p-n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n-ZnS : In/p-ZnS : In, Ag, N/p-GaAs and p-ZnS : In, Ag, N/n-ZnS : In/n-GaAs. Both of these structures showed rectifying behavior which is expected for p-n junctions. The forward voltag