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Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering

✍ Scribed by W. Paul; A.J. Lewis; G.A.N. Connell; T.D. Moustakas

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 319 KB
Volume: 88
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(93)90287-w

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