## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann
✦ LIBER ✦
Ultra-shallow p+-junction formation in silicon by excimer laser doping: a heat and mass transfer perspective
✍ Scribed by X. Zhang; J.R. Ho; C.P. Grigoropoulos
- Book ID
- 107759854
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 816 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0017-9310
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## Abstract The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p^+^/n junctions in silicon. In this study, shallow p^+^/n junctions were formed by non‐melt annealing implanted samples using