✦ LIBER ✦

Influence of electric-field-assisted thermal ionization on the formation of the schottky barrier between metal and amorphous silicon

✍ Scribed by P. N. Krylov

Book ID: 110120326
Publisher: Springer
Year: 2000
Tongue: English
Weight: 56 KB
Volume: 34
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1187975

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of a glassy membrane on the Schot

Effect of a glassy membrane on the Schottky barrier between silicon and metallic silicides

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 162 KB

Classified abstracts 33983407 permeates helium contained in analysed probes. It is found that the coefficient of trapping He ions in the pump is 0.76 f 30% and it does not deoend on discharge voltage in the range 0.9 to 3.3 kV. The life of the indicator is lo4 &alysesat a sensitivity of 5 x 10-r" A/

On the effect of vacancies in the silico

On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface

✍ S. Yu. Davydov; O. V. Posrednik 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 141 KB

The influence of an external electric fi

The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals

✍ Z. V. Basheleishvili; T. A. Pagava 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 32 KB