Characteristics of TiSi2contact to BF2-d
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J. S. Choi; S. H. Paek; Y. S. Hwang; S. H. Choi; D. W. Kim; H. K. Moon; J. K. Ch
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Article
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1993
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Springer
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English
⚖ 948 KB
The reaction mechanism of titanium silicide was investigated for varying amounts, of BF 2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were va