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Doping characteristics of BF2+ implants in 〈100〉 and 〈111〉 silicon

✍ Scribed by Drobny, V.F.; Rubalcava, J.


Book ID
114538775
Publisher
IEEE
Year
2001
Tongue
English
Weight
164 KB
Volume
48
Category
Article
ISSN
0018-9383

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The reaction mechanism of titanium silicide was investigated for varying amounts, of BF 2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were va