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Electrically active defects in BF2+ implanted and germanium preamorphized silicon

✍ Scribed by Farid Boussaid; Mohammed Benzohra; François Olivie; Daniel Alquier; Augustin Martinez

Book ID
114170544
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
707 KB
Volume
134
Category
Article
ISSN
0168-583X

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We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te