Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted silicon: J R Ayres et al, J appl Phys, 62, 1987, 3628–3632

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 149 KB
• Volume: 39
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(89)90417-x