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Dopant redistribution of As-implanted SOI films during rapid thermal annealing

✍ Scribed by Lin Cheng-lu; Tsou Shih-chang

Book ID
113278815
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
133 KB
Volume
21
Category
Article
ISSN
0168-583X

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We studied arsenic redistribution with annealing time in the Si-W system during the formation of WSi 2 by rapid thermal processing at 850 Β°C. The silicon was arsenic doped and the tungsten was deposited by sputtering. A significant amount of arsenic diffuses back and segregates at the WSi2-Si interf