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Donor activity of ion-implanted erbium in silicon

✍ Scribed by L. Palmetshofer; Yu. Suprun-Belevich; M. Stepikhova


Book ID
114168842
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
435 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Donor formation in silicon owing to ion
✍ F.P. Widdershoven; J.P.M. Naus πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 317 KB

Schottky diodes in n-and pope silicon, implanted with erbium and subsequently annealed at 900 Β°C were characterized with capacitance-voltage (CV) and deep level transient spectroscopy (DL TS) techniques. The implanted samples showed an excess donor concentration with a depth profile similar to an er