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Rutherford backscattering and secondary ion mass spectrometry studies of erbium implanted silicon

โœ Scribed by W.P. Gillin; Zhang Jingping; B.J. Sealy


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
259 KB
Volume
77
Category
Article
ISSN
0038-1098

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Quantitative analysis of the native oxide on silicon wafers has been investigated by secondary ion mass spectrometry (SIMS) combined with an encapsulation method. In the encapsulation technique, the sample surface is covered with a thin รlm whose material is identical to that of the substrate of the