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Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

✍ Scribed by B. Golja; A.G. Nassibian; D. Cohen

Publisher: Elsevier Science
Year: 1981
Weight: 420 KB
Volume: 191
Category: Article
ISSN: 0167-5087
DOI: 10.1016/0029-554x(81)90984-8

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