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DLTS study of n-type GaN grown by MOCVD on GaN substrates

✍ Scribed by Y. Tokuda; Y. Matsuoka; H. Ueda; O. Ishiguro; N. Soejima; T. Kachi

Book ID
108268892
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
567 KB
Volume
40
Category
Article
ISSN
0749-6036

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Photoluminescence of Mg-doped m-plane Ga
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✍ Monemar, Bo ;Paskov, Plamen ;Pozina, Galia ;Hemmingsson, Carl ;Bergman, Peder ;L πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 355 KB

## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^βˆ’3^ to above 10^20^ cm^βˆ’3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito