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Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

✍ Scribed by Z.X. Qin; Z.Z. Chen; H.X. Zhang; X.M. Ding; X.D. Hu; T.J. Yu; Y.Z. Tong; G.Y. Zhang

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 88 KB
Volume: 5
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(03)00048-9

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