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Divacancy defects in germanium studied using deep-level transient spectroscopy

✍ Scribed by Christian Petersen, M.; Nylandsted Larsen, A.; Mesli, A.


Book ID
121271606
Publisher
The American Physical Society
Year
2010
Tongue
English
Weight
228 KB
Volume
82
Category
Article
ISSN
1098-0121

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Deep level transient spectroscopy of tra
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The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional