𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (0 0 1) GaAs using MBE

✍ Scribed by Lien Tran; Fariba Hatami; W.T. Masselink; Jens Herfort; Achim Trampert

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
797 KB
Volume
323
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

✦ Synopsis

We characterize structural and magnetic properties of the dilute magnetic semiconductor (In,Mn)Sb grown on GaAs (0 0 1) by molecular beam epitaxy. The films have surface features consisting of dense orthogonally oriented strain-driven hillocks. In addition, triangularly shaped hillocks, presumed to be MnSb clusters, are observed with diameters in the range of 200 nm. The density and size of these triangular hillocks depend strongly on the Mn content. X-ray scattering shows that the presence of Mn in the InSb films decreases the average lattice constant as well as the degree of relaxation of the (In,Mn)Sb films. The distribution of Mn is also investigated by cross-sectional transmission electron microscopy. Two regions are observed: a (In,Mn)Sb film with small defect density and MnSb clusters on the surface. Magnetization measurements indicate that both the (In,Mn)Sb alloy as well as the MnSb inclusions are ferromagnetic.

πŸ“œ SIMILAR VOLUMES

Spontaneous Hall effect in MBE grown Fe
Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates
✍ K.-J. Friedland; R. NΓΆtzel; H.-P. SchΓΆnherr; A. Riedel; H. Kostial; K.H. Ploog πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 211 KB

The spontaneous Hall e ect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes alon

Dislocation-limited electron transport i
Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)
✍ T. Sato; T. Suzuki; S. Tomiya; S. Yamada πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 190 KB

We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which i

Magnetic properties of MnAs thin films g
Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE
✍ G.E. Sterbinsky; S.J. May; P.T. Chiu; B.W. Wessels πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 465 KB

The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single a phase at room temperature with a B-type varian

Electron microscopy studies of thin Mo f
Electron microscopy studies of thin Mo films grown by MBE on (1 0 0) SrTiO3 substrates
✍ E Tchernychova; C Scheu; T Wagner; Q Fu; M RΓΌhle πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 696 KB

A highly mismatched Mo/SrTiO 3 system was found to develop two non-equivalent orientation relationships between the metal film and the ceramic substrate. The molybdenum films, with a nominal thickness of 50 nm, were deposited by molecular beam epitaxy at T substrate ΒΌ 600 Β°C. The film and the substr