✦ LIBER ✦

Dislocation Reduction by Glide in Epitaxial IV–VI Layers on Si Substrates

✍ Scribed by H. Zogg

Book ID: 113087365
Publisher: Springer US
Year: 2012
Tongue: English
Weight: 314 KB
Volume: 41
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-012-2031-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study on interfacial dislocations of Si

Study on interfacial dislocations of Si substrate/epitaxial layer by defect trapping

✍ Lin Shao; Xuemei Wang; Irene Rusakova; Hui Chen; Jiarui Liu; Phillip E. Thompson 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 646 KB

Study of threading dislocation reduction

Study of threading dislocation reduction by strained interlayer in InP layers grown on GaAs substrates

✍ Y. Okuno; T. Kawano 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 647 KB

Effect of the sign of misfit strain on t

Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

✍ V. I. Vdovin; M. G. Mil’vidskii; T. G. Yugova 📂 Article 📅 2005 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 63 KB

Reduction of the dislocation density for

Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

✍ Y. D. Woo; H. I. Lee; T. W. Kang; T. W. Kim; K. L. Wang 📂 Article 📅 1995 🏛 Springer 🌐 English ⚖ 314 KB

Reduction of dislocations in GaAs and In

Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance

✍ H. Beneking; P. Narozny; N. Emeis; K. H. Goetz 📂 Article 📅 1986 🏛 Springer US 🌐 English ⚖ 627 KB

Reduced defect densities in the ZnO epil

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

✍ Onuma, T.; Chichibu, S. F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawas 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 368 KB