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Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

✍ Scribed by Onuma, T.; Chichibu, S. F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

Book ID: 119948813
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 368 KB
Volume: 85
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1832734

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