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Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

✍ Scribed by Janet E. Hails; Andrew M. Keir; Andrew Graham; Gerald M. Williams; Jean Giess


Book ID
107453862
Publisher
Springer US
Year
2007
Tongue
English
Weight
356 KB
Volume
36
Category
Article
ISSN
0361-5235

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