Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance

✍ Scribed by H. Beneking; P. Narozny; N. Emeis; K. H. Goetz

• Book ID: 112817001
• Publisher: Springer US
• Year: 1986
• Tongue: English
• Weight: 627 KB
• Volume: 15
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02659638