Dislocation motion and multiplication during the growth of silicon ribbon
β Scribed by Y.K. Kim; R.J. De Angelis; C.T. Tsai; O.W. Dillon
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 888 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0001-6160
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π SIMILAR VOLUMES
In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra
The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys