A preliminary study of growth interruption effects on the GaAs/AlGaAs layers is reported. Deep level transient spectroscopy (DLTS) is performed on Al Schottky barrier devices fabricated on Si-doped, isotype GaAs/Al 0.78 Ga 0.22 As heterostructures grown by molecular beam epitaxy (MBE), both with (20
โฆ LIBER โฆ
Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures
โ Scribed by A. Raisanen; L. J. Brillson; R. S. Goldman; K. L. Kavanagh; H. Wieder
- Book ID
- 112814945
- Publisher
- Springer US
- Year
- 1994
- Tongue
- English
- Weight
- 488 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0361-5235
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