Quantum dots (QDs), which capture and emit carriers like a giant trap, are studied using deep level transient spectroscopy (DLTS). The electrons and holes in the QDs are emitted from the relevant energy levels to the conduction and valence bands, respectively, of the barrier layers with increasing t
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
β Scribed by Z-Q. Fang; Q. H. Xie; D. C. Look; J. Ehret; J. E. Van Nostrand
- Book ID
- 107458012
- Publisher
- Springer US
- Year
- 1999
- Tongue
- English
- Weight
- 170 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0361-5235
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The photoluminescence (PL) of In 0.55 Al 0.45 As/Al 0.5 Ga 0.5 As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, ind