Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructures

✍ Scribed by Bonard, Jean‐Marc; Ganière, Jean‐Daniel

• Book ID: 117998590
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 470 KB
• Volume: 79
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.361464