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Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructures

✍ Scribed by Zou, J.; Cockayne, D. J. H.


Book ID
121647718
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
590 KB
Volume
63
Category
Article
ISSN
0003-6951

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## Abstract Double‐barrier quantum‐well resonant tunneling heterostructures of GaAs/In~0.1~Ga~0.9~As/AlAs have been used as pressure‐sensing elements of designed micro‐electro‐mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differ