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Ion beam induced modification of lattice strains in In0.1Ga0.9As/GaAs system

โœ Scribed by S.V.S. Nageswara Rao; A.K. Rajam; Azher M. Siddiqui; D.K. Avasthi; T. Srinivasan; Umesh Tiwari; S.K. Mehta; R. Muralidharan; R.K. Jain; Anand P. Pathak


Book ID
114167537
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
472 KB
Volume
212
Category
Article
ISSN
0168-583X

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## Shubnikov-de Haas (SdH) measurements were performed on a 200 A laver of pseudomorphic InD.lDGaD.gDAs grown by molecular beam epitaxy on undoped GaAs with an overlayer of A10.15GaO.85As. The AlGaAs consists of a spacer and a heavily doped layer. Measurements were taken in magnetic fields up to