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Direct photo-patternable, low-temperature processable polyimide gate insulator for pentacene thin-film transistors

โœ Scribed by Kwang-Suk Jang; Hye Jung Suk; Won Soo Kim; Taek Ahn; Jae-Won Ka; Jinsoo Kim; Mi Hye Yi


Book ID
116807445
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
692 KB
Volume
13
Category
Article
ISSN
1566-1199

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Stacked gate insulator of photooxide and
โœ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good