Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
β Scribed by Avis, Christophe; Kim, Youn Goo; Jang, Jin
- Book ID
- 111989094
- Publisher
- Royal Society of Chemistry
- Year
- 2012
- Tongue
- English
- Weight
- 726 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0959-9428
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π SIMILAR VOLUMES
In this study, we present a low voltage pentacene organic thin film transistor (OTFT) with poly(styrene-co-methyl methacrylate) grafted hafnium oxide (PS-r-PMMA/HfO x ) as gate dielectrics. The HfO x was sputtered at room temperature to approach low temperature and meet low cost requirements of orga
prober from SΓSS in a dark environment. An Att/Huber unichiller and a temperature controller were used to set the temperature between 293 K to 423 K. At each temperature step thermal equilibrium was awaited before starting the measurements.