Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors

✍ Scribed by Michael Lorenz; Holger von Wenckstern; Marius Grundmann

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 442 KB
• Volume: 23
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.201103087

✦ Synopsis

prober from SÜSS in a dark environment. An Att/Huber unichiller and a temperature controller were used to set the temperature between 293 K to 423 K. At each temperature step thermal equilibrium was awaited before starting the measurements.