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Low-Temperature-Deposited $\hbox{SiO}_{2}$ Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors

โœ Scribed by C. Fan; P. Chiu; C. Lin


Book ID
126633892
Publisher
IEEE
Year
2010
Tongue
English
Weight
227 KB
Volume
31
Category
Article
ISSN
0741-3106

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