Low-Temperature-Deposited $\hbox{SiO}_{2}$ Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors

✍ Scribed by C. Fan; P. Chiu; C. Lin

• Book ID: 126633892
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 227 KB
• Volume: 31
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2010.2080311