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Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

✍ Scribed by Yoo, Sungmi; Yoon, Jun-Young; Ryu, Juwhan; Kim, Yun Ho; Ka, Jae-Won; Yi, Mi Hye; Jang, Kwang-Suk

No coin nor oath required. For personal study only.

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