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Direct observation of electrical faults in planar transistors made in epitaxially grown silicon

✍ Scribed by D.V. Sulway; P.R. Thornton; M.J. Turner

Book ID
103387354
Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
338 KB
Volume
11
Category
Article
ISSN
0038-1101

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We report, in this paper, the detailed measurements obtained from the double quantum dot silicon single electron transistors. Both the drain current and the differential conductance measurements in large drain voltage regime show small conductance peaks-as many as seven. The differential conductance