Migration of silicon atoms in planar-doped GaAsAlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

✍ Scribed by A.T.G. Carvalho; A.G. de Oliveira; E.S. Alves; M.V. Baeta Moreira

• Book ID: 103955025
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 654 KB
• Volume: 35
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)01332-6