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A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy

✍ Scribed by Dhar, S.; Won-Pyo Hong; Bhattacharya, P.K.; Nashimoto, Y.; Feng-Yuh Juang


Book ID
114595566
Publisher
IEEE
Year
1986
Tongue
English
Weight
997 KB
Volume
33
Category
Article
ISSN
0018-9383

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