An optimized in situ argon sputter clean
✦ LIBER ✦
Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800°C) epitaxial silicon
✍ Scribed by Ohi, S.; Burger, W.R.; Reif, R.
- Book ID
- 114537111
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 924 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.65746
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