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Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks

✍ Scribed by Suhyun Kim; Yoshifumi Oshima; Nobue Nakajima; Naoto Hashikawa; Kyoichiro Asayama; Kunio Takayanagi

No coin nor oath required. For personal study only.

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Characterization and reliability of dual

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[IEEE 2007 International Workshop on Ele

✍ Shahil, K. M. Farhan; Arafat, Md. Nayeem; Khosru, Q. D. M.; Khan, M. Rezwan 📂 Article 📅 2007 🏛 IEEE ⚖ 752 KB