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[IEEE 2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) - Tsinghua University (2007.06.3-2007.06.4)] 2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) - Study of charge trapping/detrapping mechanism in SiO2/HfO2 stack gate dielectrics considering two-way detrapping

✍ Scribed by Shahil, K. M. Farhan; Arafat, Md. Nayeem; Khosru, Q. D. M.; Khan, M. Rezwan

Book ID: 123614406
Publisher: IEEE
Year: 2007
Weight: 752 KB
Category: Article
ISBN-13: 9781424410989
DOI: 10.1109/EDST.2007.4289792

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